The threshold of gallium nitride transistors is lower than that of silicon MOSFETs. This is made possible by the almost flat relationship between threshold and temperature along with the very low C GD, as described later. Figure 3 shows the transfer characteristics curve for the EPC2218, 100 V. Browse DigiKey's inventory of GaNFET (Gallium Nitride)GaNFET (Gallium Nitride). Features, Specifications, Alternative Product, Product Training Modules, and Datasheets are all available. AEC-Q101 GAN FET 100V 13.5 MOHM: N-Channel: GaNFET (Gallium Nitride) 100V: 18A (Ta) Die: EPC2206: GANFET N-CH 80V 90A DIE: N-Channel: GaNFET (Gallium.
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Click here for more information650 V, 35 mΩ Gallium Nitride (GaN) FET in a TO-247 package
The GAN041-650WSB is a 650 V, 35 mΩ Gallium Nitride (GaN) FET in a TO-247 package. It is a normally-off device that combines Nexperia’s latest high-voltage GaN HEMT H2 technology and low-voltage silicon MOSFET technologies — offering superior reliability and performance.
Orderable parts
| Type number | Orderable part number | Ordering code (12NC) | Package | Buy from distributors |
|---|---|---|---|---|
| GAN041-650WSB | GAN041-650WSBQ | 934661752127 | SOT429 | Order product |
650 V, 35 mΩ Gallium Nitride (GaN) FET in a TO-247 package
Buy from Nexperia
Buy from distributors
** Displayed price per unit is based on small quantity orders
*** Authorized resellers for overstock, mature, and discontinued products which are warranted for reliability by the reseller, no longer by Nexperia
Features and benefits
- Ultra-low reverse recovery charge
- Simple gate drive (0 V to +10 V or 12 V)
- Robust gate oxide (±20 V capability)
- High gate threshold voltage (+4 V) for very good gate bounce immunity
- Very low source-drain voltage in reverse conduction mode
- Transient over-voltage capability
Applications
- Hard and soft switching converters for industrial and datacom power
- Bridgeless totempole PFC
- PV and UPS inverters
- Servo motor drives
Parametrics
| Type number | ||||||||||||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| GAN041-650WSB | SOT429 | TO-247 | Production | N | 1 | 650 | 41 | 175 | 47.2 | 5 | 22 | 187 | 150 | 3.9 | N | 1500 | 147 | 2020-05-14 |
Package
| Status | Package | Package information | Reflow-/Wave soldering | |||
|---|---|---|---|---|---|---|
| GAN041-650WSB | GAN041-650WSBQ (9346 617 52127) | Active | GAN041650WSB | TO-247 (SOT429) | SOT429 | Horizontal, Rail Pack |
Quality, reliability & chemical content
Quality and reliability disclaimerDocumentation (18)
| File name | Title | Type | Date |
|---|---|---|---|
| GAN041-650WSB | 650 V, 35 mΩ Gallium Nitride (GaN) FET in a TO-247 package | Data sheet | 2021-01-12 |
| AN90005 | Understanding Power GaN FET data sheet parameters | Application note | 2020-06-08 |
| AN90004 | Probing considerations for fast switching applications | Application note | 2019-11-15 |
| AN90006 | Circuit design and PCB layout recommendations for GaN FET half bridges | Application note | 2019-11-15 |
| AN90021 | Power GaN technology: the need for efficient powerconversion | Application note | 2020-08-14 |
| nexperia_brochure_gan | Nexperia GaN FETs brochure | Brochure | 2021-03-29 |
| nexperia_document_brochure_GaN_CHN | 高功率氮化镓场效应 晶体管 | Brochure | 2021-03-29 |
| TO-247_SOT429_mk | plastic, single-ended through-hole package; 3 leads; 5.45 mm pitch; 20.45 mm x 15.6 mm x 4.95 mm body | Marcom graphics | 2019-02-19 |
| sot429_3d | plastic single-ended through-hole package; heatsink mounted; 1 mounting hole; 3 lead TO-247 | Outline 3d | 2020-04-06 |
| GAN041_650WSB | GAN041-650WSB SPICE model | SPICE model | 2021-03-24 |
| TN90004 | An insight into Nexperia Power GaN technology – Applications, quality, reliability and scalability | Technical note | 2020-07-21 |
| GaN041-650WSB_cauer | GaN041-650WSB Cauer thermal model | Thermal model | 2021-03-25 |
| GaN041-650WSB | GaN041-650WSB Foster thermal model | Thermal model | 2021-03-25 |
| GaN041-650WSB_RC_Thermal_Model | GaN041-650WSB RC thermal model | Thermal model | 2021-03-25 |
| nexperia_whitepaper_gan_robustness_aecq101 | White paper: GaN FET technology and the robustness needed for AEC-Q101 qualification | White paper | 2020-06-08 |
| nexperia_whitepaper_gan_robustness_aecq101_CN | Whitepaper: GaN FET technology and the robustness needed for AEC-Q101 qualification – Chinese (650 V GaN FET技术可提供 出色效率，以及AEC-Q101 认证所需的耐用性) | White paper | 2020-07-15 |
| nexperia_whitepaper_gan_need_for_efficient_conversion | White paper: Power GaN technology: the need for efficient power conversion | White paper | 2020-07-23 |
| nexperia_whitepaper_gan_need_for_efficient_conversion_CHN | 白皮书: 功率GaN技术： 高效功率转换的需求 | White paper | 2020-08-17 |
Support
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Models
| File name | Title | Type | Date |
|---|---|---|---|
| GAN041_650WSB | GAN041-650WSB SPICE model | SPICE model | 2021-03-24 |
| GaN041-650WSB_cauer | GaN041-650WSB Cauer thermal model | Thermal model | 2021-03-25 |
| GaN041-650WSB | GaN041-650WSB Foster thermal model | Thermal model | 2021-03-25 |
| GaN041-650WSB_RC_Thermal_Model | GaN041-650WSB RC thermal model | Thermal model | 2021-03-25 |
Ordering, pricing & availability
Gan Fets
| Buy online | ||||
|---|---|---|---|---|
| GAN041-650WSB | GAN041-650WSBQ | 934661752127 | Horizontal, Rail Pack | Order product |
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